Mn implanted GaAs by low energy ion beam deposition
نویسندگان
چکیده
منابع مشابه
Surface Morphology Evolution of GaAs by Low Energy Ion Sputtering
Low energy Ar ion sputtering, typically below 1,200 eV, of GaAs at normal beam incident angle is investigated. Surface morphology development with respect to varying energy is analyzed and discussed. Dot-like patterns in the nanometer scale are obtained above 600 eV. As the energy approaches upper eV range regular dots have evolved. The energy dependent dot evolution is evaluated based on solut...
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Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...
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Ion-implantation-induced extended defect formation and annealing processes have been studied in GaAs. Mg, Be, Si, Ge, and Sn ions were implanted between 40 and 185 keV over the dose range of 1 X 10t3-1 X 1015/cm2. Furnace annealing after capping with S&N4 was performed between 700 and 900 “C for times between 5 min and 10 h. Plan-view and crosssectional transmission electron microscopy results ...
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The performance of multilayered thin film materials often depends sensitively upon the (physical) roughness and degree of (chemical) mixing at interfaces. Irradiation of a growth surface with an assisting ion beam is often used to modify surface roughness. Molecular dynamics has been used to explore the use of low energy (less than 20 eV) Xe+ and Ar+ assisted deposition of model Ni/Cu/Ni multil...
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The laser damage resistance of optical coatings is a key point for a large number of applications. The aim of this work is to test and analyze the laser damage resistance of a thin film material commonly used for high power applications (SiO2) and deposited with different techniques: Electron Beam Deposition, Ion Assisted Deposition, Low Voltage Reactive Ion Plating and Dual Ion Beam Sputtering...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2004
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2003.12.039